TA1, tseem hu ua tantalum diboride, yog ib qho kev sib xyaw ua ke ntawm tantalum thiab boron. Nws tau txais kev saib xyuas hauv zej zog kev tshawb fawb vim nws lub zog muaj zog thiab hluav taws xob conductivity.
Thaum nws los txog rau cov khoom siv tshuaj, TA1 muaj qhov melting point ntawm 3,280 degree thiab boiling point ntawm 4,727 degree. Nws qhov ceev yog 10.8 g / cm³ thiab nws muaj ib qho nyuaj, nws yog xim hlau grey. TA1 kuj tseem tiv taus corrosion, ua rau nws zoo tagnrho rau siv nyob rau hauv ib puag ncig hnyav.
Qhov sib xyaw ua ke zoo kawg nkaus lub zog thiab hluav taws xob conductivity ua rau nws yog tus neeg sib tw zoo rau kev siv ntau yam kev siv. Piv txwv li, TA1 tau siv rau hauv kev tsim cov cuab yeej txiav, nrog rau kev txhim kho cov cuab yeej tshiab. Nws kuj tseem raug kawm ua cov khoom siv rau cov tshuab hluav taws xob nuclear thiab lwm yam kev siv kub.
Tsis ntev los no, cov kws tshawb fawb tau pib tshawb nrhiav lub peev xwm ntawm TA1 hauv cov khoom siv hluav taws xob. Nws cov conductivity siab ua rau nws yog ib qho khoom txaus nyiam siv rau hauv microelectronics thiab semiconductors. Nws kuj tseem raug kawm raws li qhov ua tau hloov pauv rau graphene, cov khoom siv nrov hauv kev lag luam hluav taws xob.
Txawm hais tias muaj ntau lub peev xwm siv rau TA1, nws cov khoom tsim tawm tseem nyuaj. Lub compound yog nyuaj thiab kim los tsim, uas tau txwv nws siv nyob rau hauv ntau daim ntawv thov. Txawm li cas los xij, kev tshawb fawb tsis tu ncua yog txhawm rau nrhiav txoj hauv kev tshiab los tsim TA1 hauv tus nqi tsim nyog, uas tuaj yeem qhib qhov muaj peev xwm tshiab rau cov khoom zoo kawg no.
