High Purity Tantalum Hmoov

Ntxiv nrog rau sputtering films nyob rau hauv semiconductor technology, tantalum hmoov no kuj siv tau rau lwm yam kev siv, xws li kev kho mob daim ntaub ntawv thiab txheej txheej.

Cov txheej txheem hauv qab no rau kev tsim cov khoom siv high-purity tantalum hmoov muaj cov kauj ruam hauv qab no ua ntu zus.

1) hydrogenating high-purity tantalum ingot

2) crushing thiab sieving lub tantalum chips tau los ntawm hydrogenation ntawm tantalum ingots thiab ces purifying lawv los ntawm acid ntxuav kom tshem tawm cov paug ntawm impurities coj los ntawm lub pob milling txheej txheem

3) Kub-kub dehydrogenation ntawm lub resulting tantalum hmoov

4) deoxidation ntawm lub resulting tantalum hmoov

5) acid ntxuav, ntxuav dej, ziab, thiab sieving ntawm tantalum hmoov

6) Cov tantalum hmoov yog raug rau kev kho cua sov qis, ces txias, passivated, tawm, thiab sieved kom tau cov khoom tiav.

Nyob rau hauv cov txheej txheem tsim, high-purity tantalum ingots yog txhais raws li cov neeg uas muaj tantalum cov ntsiab lus ntawm 99.995 feem pua ​​los yog ntau tshaj. Cov ingots no tuaj yeem tau txais ntau txoj hauv kev, piv txwv li los ntawm sintering lossis electron bombardment ntawm qhov kub thiab txias siv tantalum hmoov uas tsim los ntawm ntau yam txheej txheem raws li cov khoom siv raw. Cov ingots no kuj muaj muag.

Tsis muaj kev txwv rau yuav ua li cas cov hydrogenated tantalum chips tuaj yeem raug crushed, piv txwv li los ntawm kev siv lub tshuab ziab khaub ncaws los yog lub pob zeb, tab sis zoo dua tag nrho cov crushed tantalum hmoov yuav tsum muaj peev xwm dhau los ntawm ib qho screen ntawm 400 mesh lossis siab dua, xws li 500 mesh, 600 mesh lossis 700 mesh. Qhov siab dua qhov mesh loj, qhov zoo dua cov tantalum hmoov, tab sis yog tias cov hmoov zoo dhau lawm, piv txwv li saum 700 mesh, nws nyuaj rau tswj cov pa oxygen ntawm tantalum hmoov. Yog li ntawd, lub sieving hauv kauj ruam 2) zoo dua yog hais txog sieving ntawm 400 thiab 700 mesh. Rau lub hom phiaj ntawm kev piav qhia thiab tsis txwv, pob zeb crushing yog siv rau hauv kev siv.

Tsis zoo li qhov kub thiab txias dehydrogenation, uas yog siv nyob rau hauv lub tshav pob kom txuag tau lub zog, high-temperature dehydrogenation yog nyiam ua nyob rau hauv lub chaw tsim khoom los ntawm cua sov tantalum hmoov nyob rau hauv inert gas tiv thaiv thiab ua kom sov li ntawm 60-300 feeb (xws li txog 120 feeb, txog 150 feeb, txog 240 feeb, txog 200 feeb) ntawm li 800-1000 degree (xws li txog 900 degree, txog 950 degree, txog 980 degree, txog 850 degree, txog 880 degree). Tom qab ntawd cov tantalum hmoov yog txias, tshem tawm ntawm lub cub tawg, thiab sieved kom tau lub dehydrogenated tantalum hmoov. Kuj ceeb tias, cov neeg tsim khoom pom tau tias qhov kub siab dua tau piav qhia rau dehydrogenation ua rau nws muaj peev xwm txo qis kev ua haujlwm saum npoo tib lub sijhawm raws li dehydrogenation.

Hauv kauj ruam 4, tantalum hmoov yog deoxidized ntawm qhov kub thiab txias, piv txwv li qhov kub siab tshaj plaws ntawm cov txheej txheem yog qhov zoo dua tsis siab tshaj qhov dehydrogenation kub, uas feem ntau yog li ntawm 50-300 degree hauv qab qhov kub ntawm dehydrogenation (xws li txog 100 degree , Txog 150 degree, txog 180 degree, txog 80 degree, txog 200 degree), uas yog txaus kom ua tiav lub hom phiaj ntawm deoxygenation thaum xyuas kom meej tias cov tantalum hais tsis sinter los yog loj hlob kom cov magnesium los yog magnesium oxide hais tsis ua encapsulated nyob rau hauv cov tantalum hais. Cov magnesium los yog magnesium oxide hais yog encapsulated nyob rau hauv lub tantalum hais thiab tsis yooj yim tshem tawm thaum lub sij hawm tom ntej pickling txheej txheem, uas ua rau ib tug siab magnesium ntsiab lus nyob rau hauv cov khoom tiav.

Deoxidation yog nqa tawm los ntawm kev ntxiv ib tug txo tus neeg sawv cev rau tantalum hmoov. Qhov zoo dua, cov txheej txheem deoxidation hais tias feem ntau yog ua raws li kev tiv thaiv roj inert. Feem ntau, tus neeg sawv cev txo qis hauv nqe lus nug muaj kev sib raug zoo rau cov pa ntau dua li tantalum ua rau oxygen. Xws li cov tshuaj txo qis yog, piv txwv li, alkaline ntiaj teb hlau, cov hlau tsis tshua muaj hauv ntiaj teb, thiab lawv cov hydrides, feem ntau yog magnesium hmoov. Raws li ib qho tshwj xeeb embodiment, qhov no tuaj yeem ua tiav los ntawm kev sib xyaw tantalum hmoov nrog {{0}}}2-2.0 feem pua ​​magnesium hlau hmoov los ntawm qhov hnyav ntawm tantalum hmoov, loading lub tais siv txoj kev piav nyob rau hauv Suav patent CN 102120258A, cua sov nyob rau hauv inert gas tiv thaiv, tuav ntawm approx. 600-750 degree (piv txwv li approx. 700eC) rau kwv yees li. 2-4 teev, ces khiav tawm thiab tuav dua nyob rau hauv kev khiav tawm rau kwv yees li. 2-4 teev. Tom qab ntawd qhov kub thiab txias yog txo qis, passivated, thiab tshem tawm ntawm lub qhov cub kom tau txais ib qho deoxidized, high-purity tantalum hmoov.

Qhov kom zoo dua ntawm txoj kev no yog kev sib xyaw ua ke ntawm high-temperature dehydrogenation, low-temperature deoxidation, thiab low-temperature heat treatment. Raws li cov hmoov tantalum nyoos muaj hydrides uas yog inevitably tsim los ntawm kev nqus ntawm hydrogen, nws cov khoom (xws li lattice tas li, hluav taws xob tsis kam, thiab lwm yam) tau hloov pauv hauv txoj hauv kev uas tseem tsis tuaj yeem tshem tawm tag nrho los ntawm cov pa qis qis dehydrogenation. Lub hom phiaj ntawm kev siv qhov kub qis dehydrogenation yog kom tsis txhob muaj kev loj hlob ntawm sintered hais los ntawm high deoxygenation kub.

The above-mentioned combination of high-temperature dehydrogenation, low-temperature deoxidation, and low-temperature heat treatment avoids the sintering and growth of tantalum powder particles caused by high temperatures in the conventional process (i.e. dehydrogenation and deoxidation at the same time) and the encapsulation of magnesium or magnesium oxide particles inside the tantalum particles, resulting in poorly controllable particle size and high magnesium content in the final product; it also avoids the problem of incomplete dehydrogenation caused by low temperatures, resulting in high hydrogen content. The problem of high hydrogen content due to incomplete dehydrogenation caused by low temperatures is also avoided. The low-temperature heat treatment mainly removes the residual magnesium metal after deoxidation, the impurities such as H and F from the pickling, and ensures that the particles do not grow, so that the impurity content is well controlled while achieving the particle size requirements. In the end, the method of the invention resulted in a high-purity tantalum powder with a purity of >99.995% los ntawm GDMS.

Tantalum hmoov kev sib piv

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